Fast Recovery Diodes (FRD)
1
Publication date: March 2004 SKJ00004BED
MA3D652 (MA6D52)
Silicon planar type (cathode common)
For high-frequency rectification
■ Features
•
Low forward voltage V
F
•
Fast reverse recovery time t
rr
•
TO-220D (Full-pack package) with high dielectric breakdown
voltage
•
Easy-to-mount, caused by its V cut lead end
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
1: Anode
2: Cathode
(Common)
3: Anode
TO-220D-A1 Package
Parameter Symbol Rating Unit
Repetitive peak reverse voltage
V
RRM
200 V
Non-repetitive peak reverse V
RSM
200 V
surge voltage
Forward current (Average) I
F(AV)
20 A
Non-repetitive peak forward I
FSM
100 A
surge current
*
Junction temperature T
j
−40 to +150 °C
Storage temperature T
stg
−40 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 10 A, T
C
= 25°C 1.0 V
Repetitive peak reverse current I
RRM1
V
RRM
= 200 V, T
C
= 25°C 100 µA
I
RRM2
V
RRM
= 200 V, T
j
= 150°C10mA
Reverse recovery time
*
t
rr
I
F
= 1 A, I
R
= 1 A 70 ns
Thermal resistance (j-c) R
th(j-c)
3.0 °C/W
Thermal resistance (j-a) R
th(j-a)
63 °C/W
■ Electrical Characteristics T
a
= 25°C ± 3°C
Internal Connection
D.U.T
t
rr
0.1 × I
R
I
F
I
R
50 Ω
5.5 Ω
50 Ω
1.4
±0.2
1.6
±0.2
0.8
±0.1
0.55
±0.15
2.54
±0.30
5.08
±0.50
123
2.6
±0.1
2.9
±0.2
4.6
±0.2
φ 3.2
±0.1
3.0
±0.5
9.9
±0.3
15.0
±0.5
13.7
±0.2
4.2
±0.2
Solder Dip
Note)
*
: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3.
*
:t
rr
measurement circuit
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).
