Schottky Barrier Diodes (SBD)
1
Publication date: April 2004 SKH00043BED
MA3D750 (MA7D50), MA3D750A (MA7D50A)
Silicon epitaxial planar type (cathode common)
For switching mode power supply
■ Features
•
Low forward voltage V
F
•
High dielectric breakdown voltage: > 5 kV
•
Easy-to-mount, due to its V cut lead end
■ Absolute Maximum Ratings T
C
= 25°C
Parameter Symbol Rating Unit
Repetitive peak MA3D750 V
RRM
40 V
reverse-voltage MA3D750A 45
Forward current (Average) I
F(AV)
10 A
Non-repetitive peak forward I
FSM
120 A
surge current
*
Junction temperature T
j
−40 to +125 °C
Storage temperature T
stg
−40 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 5 A, T
C
= 25°C 0.55 V
Reverse current MA3D750 I
R
V
R
= 40 V, T
C
= 25°C3mA
MA3D750A V
R
= 45 V, T
C
= 25°C3
Thermal resistance (j-c) R
th(j-c)
3.0 °C/W
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
1.4±0.2
1.6±0.2
0.8±0.1 0.55±0.15
2.54±0.30
5.08±0.50
123
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0±0.5
9.9±0.3
15.0±0.513.7±0.2
4.2±0.2
Solder Dip
Note)
*
: Half sine wave; 10 ms/cycle
Note) The part numbers in the parenthesis show conventional part number.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 150 MHz.
1: Anode
2: Cathode
(Common)
3: Anode
TO-220D-A1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
