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Switching Diodes
1
Publication date: February 2005 SKF00027CED
MA3S133 (MA133)
Silicon epitaxial planar type
For switching circuits
■ Features
• Two isolated elements contained in one package, allowing high-
density mounting
• Two diodes are connected in series in the package
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 100 mA 1.2 V
Reverse voltage V
R
I
R
= 100 µA80V
Reverse current I
R
V
R
= 75 V 100 nA
Terminal capacitance C
t
*
1
V
R
= 0 V, f = 1 MHz 5.5 pF
C
t
*
2
3.0
Reverse recovery time
*
3
t
rr
*
1
I
F
= 10 mA, V
R
= 6 V 150 ns
t
rr
*
2
I
rr
= 0.1 I
R
, R
L
= 100 Ω 9
■ Electrical Characteristics T
a
= 25°C ± 3°C
Marking Symbol: MP
1
3
2
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Internal Connection
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.
*
1: Between pins 2 and 3
*
2: Between pins 1 and 3
*
3: t
rr
measurement circuit
Note) The part number in the parenthesis shows conventional part number.
Parameter Symbol Rating Unit
Reverse voltage V
R
80 V
Maximum peak reverse voltage
V
RM
80 V
Forward current Single I
F
100 mA
Series 65
Peak forward
Single I
FM
200 mA
current
Series 130
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
EIAJ: SC-81 SSMini3-F2 Package
0.28
±0.05
3
12
0.28
±0.05
(0.80)
1.60
+0.05
–0.03
0.12
+0.05
–0.02
0.60
+0.05
–0.03
(0.80)
(0.51) (0.51)
0 to 0.1
(0.15)
3˚
(0.44)(0.44)
0.88
(0.375)
+0.05
–0.03
0.80
±0.05
(0.80)
1.60
±0.05
3˚
This product complies with the RoHS Directive (EU 2002/95/EC).