Switching Diodes
1
Publication date: February 2008 SKF00049CED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA4Z159 (MA4S159)
Silicon epitaxial planar type
For switching circuits
■ Features
• Two isolated elements contained in one package, allowing high-
density mounting
• Flat lead type, resulting in improved mounting efficiency and
solderability with the high-speed mounting machine
• Short reverse recovery time t
rr
• Small terminal capacitance C
t
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
80 V
Maximum peak reverse voltage
V
RM
80 V
Forward current
Single I
F
100 mA
Double 75
Peak forward
Single I
FM
225 mA
current
Double 170
Non-repetitive peak
Single I
FSM
500 mA
forward surge current
*
Double 375
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note)
*
: t = 1 s
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 100 mA 0.95 1.20 V
Reverse voltage V
R
I
R
= 100 µA80V
Reverse current I
R
V
R
= 75 V 0.1 µA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 0.9 2.0 pF
Reverse recovery time
*
t
rr
I
F
= 10 mA, V
R
= 6 V 3 ns
I
rr
= 0.1 I
R
, R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
4
1
3
2
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) The part number in the parenthesis shows conventional part number.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.
*
: t
rr
measurement circuit
■ Package
•
Code
SMini4-F1
•
Pin Name
1:Anode 1 3:Cathode 2
2:Anode 2 4:Cathode 1
■ Marking Symbol: M1B
■ Internal Connection
