Zener Diodes
Publication date: June 2008 SKE00048AED 1
本製品はRoHS指令(EU 2002/95/EC)に対応しています。
MALM062HG
Silicon planar type
For ESD protection
Features
Electrostatic discharge ESD: ±30 kV
Four elements anode-common type
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Total power dissipation
*
1
P
D
150 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
–55 to +150
°C
Electrostatic discharge
*
2
ESD
±30
kV
Note)
*
1 : P
D
= 150 mW achieved with a printed circuit board.
*
2 : Test method: IEC61000-4-2
(C = 150 pF, R = 330 W, Contact discharge: 10 times)
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Breakdown voltage
*
V
BR
I
R
= 1 mA 5.8 6.2 6.6 V
Reverse current I
R
V
R
= 4.0 V 1.0
mA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 55 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. The temperature must be controlled 25°C for V
BR
mesurement.
V
BR
value measured at other temperature must be adjusted to V
BR
(25°C)
3.
*
: V
BR
guaranted 20 ms after current flow.
Package
Code
SSMini5-F3
Pin Name
1: Cathode 1 2: Anode 1, 2, 3, 4
3: Cathode 2 4: Cathode 3
5: Cathode 4
Marking Symbol: 6.2E
Internal Connection
3
(K2)
(K3)
4
1
(K1)
2
(A1,
2,
3,
4)
(K4)
5
