Schottky Barrier Diodes (SBD)
1
Publication date: April 2004 SKH00040BED
MA2ZD14
Silicon epitaxial planar type
For high speed switching
■ Features
•
Low forward voltage: V
F
< 0.40 V
■ Absolute Maximum Ratings T
a
= 25°C
Marking Symbol: 2N
Parameter Symbol Rating Unit
Reverse voltage V
R
20 V
Repetitive peak reverse voltage V
RRM
20 V
Forward current (Average) I
F(AV)
100 mA
Peak forward current I
FM
300 mA
Non-repetitive peak forward I
FSM
1A
surge current
*
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F1
I
F
= 5 mA 0.27 V
V
F2
I
F
= 100 mA 0.40
Reverse current I
R
V
R
= 10 V 20 µA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 25 pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA 3 ns
I
rr
= 10 mA, R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Unit: mm
1 : Anode
2 : Cathode
EIAJ : SC-76 SMini2-F1 Package
5˚
5˚
1.25
±0.1
0.7
±0.1
2.5
±0.2
1.7
±0.1
0.4
±0.1
0 to 0.1
(0.15)
0.16
0.5
±0.1
1
2
+0.1
–0.06
0.35
±0.1
0 to 0.1
Note)
*
: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
4.
*
:t
rr
measurement circuit
This product complies with the RoHS Directive (EU 2002/95/EC).
