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CONFIDENTIAL – DO NOT COPY
Page 7-13
File No. SG-0198
3. Precharge
The Auto Precharge operation can be issued by having column address A10 high when a
Read or Write command is issued. If A10 is low when a Read or Write command is issued,
then normal Read or Write burst operation is executed and the bank remains active at the
completion of the burst sequence. When the Auto Precharge command is activated, the
active bank automatically begins to precharge at the earliest possible moment during the
Read or Write cycle once tRAS(min) is satisfied.
Read with Auto Precharge
If a Read with Auto Precharge command is initiated, the DDR SDRAM will enter the precharge
operation N-clock cycles measured from the last data of the burst read cycle where N is equal to the
CAS latency programmed into the device. Once the autoprecharge operation has begun, the bank
cannot be reactivated until the minimum precharge time (tRP) has been satisfied.