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Rev. 71, 07/01, page 99 of 372
Table 7-9 AC Characteristics in Transition from Memory Read Mode to Another Mode
(Conditions: V
CC
= 5.0 V ±0.5 V, V
SS
= 0 V, T
a
= 25°C ±5°C)
Item Symbol Min Max Unit Notes
Command write cycle t
nxtc
20 — µs Figure 7-7
CE hold time t
ceh
0—ns
CE setup time t
ces
0—ns
Data hold time t
dh
50 — ns
Data setup time t
ds
50 — ns
Write pulse width t
wep
70 — ns
WE rise time t
r
—30ns
WE fall time t
f
—30ns
A15–A0
I/O7–I/O0
Note: Do not enable
and at the same time.
t
ceh
t
wep
t
f
t
r
t
ces
t
nxtc
Address stable
t
ds
t
dh
Other mode command writeMemory read mode
Figure 7-7 Timing Waveforms in Transition from Memory Read Mode to Another Mode
Table 7-10 AC Characteristics in Memory Read Mode (Conditions: V
CC
= 5.0 V ±0.5 V,
V
SS
= 0 V, T
a
= 25°C ±5°C)
Item Symbol Min Max Unit Notes
Access time t
acc
— 20 µs Figure 7-8
CE output delay time t
ce
— 150 ns and 7-9
OE output delay time t
oe
— 150 ns
Output disable delay time t
df
— 100 ns
Data output hold time t
oh
5—ns