Filter
Top Products
Rev. 1.0, 07/01, page 299 of 372
20.2.6 Flash Memory Characteristics
Table 20-8 Flash Memory Characteristics
V
CC
= 3.0 to 5.5 V, V
SS
= 0.0 V, T
a
= –20 to +75°C, unless otherwise indicated.
Test
Values
Item Symbol Condition Min Typ Max Unit
Programming time (per 128 bytes)*
1
*
2
*
4
t
P
—7 —ms
Erase time (per block) *
1
*
3
*
6
t
E
— 100 — ms
Reprogramming count N
WEC
100 — — Times
Programming Wait time after SWE
bit setting*
1
x 1 ——µs
Wait time after PSU
bit setting*
1
y 50——µs
Wait time after P bit setting z1 1
≤
n
≤
6 283032µs
*
1
*
4
z2 7
≤
n
≤
1000 198 200 202 µs
z3 Additional-
programming
8 1012µs
Wait time after P bit clear*
1
α
5 ——µs
Wait time after PSU bit clear*
1
β
5 ——µs
Wait time after PV
bit setting*
1
γ
4 ——µs
Wait time after dummy write*
1
ε
2 ——µs
Wait time after PV bit clear*
1
η
2 ——µs
Wait time after SWE
bit clear*
1
θ
100 — — µs
Maximum number of
writes*
1
*
4
*
5
N — — 1000 Times