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Rev. 71, 07/01, page 103 of 372
Table 7-12 AC Characteristics in Auto-Erase Mode (Conditions: V
CC
= 5.0 V ±0.5 V,
V
SS
= 0 V, T
a
= 25°C ±5°C)
Item Symbol Min Max Unit Notes
Command write cycle t
nxtc
20 — µs Figure 7-11
CE hold time t
ceh
0—ns
CE setup time t
ces
0—ns
Data hold time t
dh
50 — ns
Data setup time t
ds
50 — ns
Write pulse width t
wep
70 — ns
Status polling start time t
ests
1—ms
Status polling access time t
spa
— 150 ns
Memory erase time t
erase
100 40000 ms
WE rise time t
r
—30ns
WE fall time t
f
—30ns
A15–A0
I/O7
I/O6
I/O5–I/O0
t
wep
t
ds
t
dh
t
f
t
r
t
ests
t
erase
t
spa
t
ces
t
ceh
t
nxtc
t
nxtc
H'20 H'20 H'00
Erase end
decision signal
Erase normal
end
decision signal
Figure 7-11 Auto-Erase Mode Timing Waveforms